MBM29F800BA 데이터 시트보기 (PDF) - Fujitsu

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MBM29F800BA

FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT

Fujitsu 

MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90

s ERASE AND PROGRAMMING PERFORMANCE

Parameter

Min.

Limits

Typ.

Max.

Sector Erase Time

—

1

8

Word Programming Time

Byte Programming Time

—

16

200

—

8

150

Chip Programming Time

—

8.4

20

Erase/Program Cycle

100,000

—

—

Unit

Comments

sec

Excludes 00H programming

prior to erasure

µs Excludes system-level

µs overhead

sec

Excludes system-level

overhead

cycles

s TSOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

s SOP PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Note: Test conditions TA = 25°C, f = 1.0 MHz

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ.

Max.

Unit

8

10

pF

8

10

pF

8.5

12.5

pF

Typ.

Max.

Unit

8

10.5

pF

8

10

pF

8.5

12.5

pF

44

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