S3C8625 데이터 시트보기 (PDF) - Samsung
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S3C8625 Datasheet PDF : 24 Pages
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KS88P6232 OTP
S3C8625/C8627/C8629/P8629
D.C. ELECTRICAL CHARACTERISTICS
Table 21-4. D.C. Electrical Characteristics
(TA = – 40 °C to + 85 °C, VDD = 4.0 V to 5.5 V)
Parameter Symbol
Conditions
Input High
leakage current
ILIH1
VIN = VDD
All input pins except XIN, XOUT
ILIH2 VIN = VDD; XOUT only
ILIH3 VIN = VDD; XIN only
Input Low
ILIL1 VIN = 0 V; All input pins except XIN,
leakage current
XOUT, and RESET
ILIL2 VIN = 0 V; XOUT only
ILIL3 VIN = 0 V; XIN only
Output High
ILOH1 VOUT = VDD
leakage current
Output Low
ILOL1 VOUT = 0 V
leakage current
Pull-up resistor
RL1 VIN = 0 V
Ports 3.7–3.4
RL2 VIN = 0 V
RESET only
Supply current
(note)
IDD1 Operation mode; 12 MHz crystal
C1 = C2 = 22pF
IDD2 Idle mode; 12 MHz crystal
C1 = C2 = 22pF
IDD3 Stop mode
Min
Typ
–
–
–
–
2.5
6
–
–
–
–
– 2.5
–6
–
–
–
–
20
47
150
280
–
15
5
1
NOTE: Supply current does not include drawn internal pull–up resistors and external loads of output.
Max
3
20
20
–3
– 20
– 20
3
–3
80
480
30
10
10
Unit
µA
µA
µA
µA
kΩ
mA
µA
21-4
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