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S3C72H8 데이터 시트보기 (PDF) - Samsung

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S3C72H8 Datasheet PDF : 24 Pages
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S3C72H8/P72H8
S3P72H8 OTP
Main Chip
Pin Name
P0.1
P0.2
TEST
RESET
VDD / VSS
Table 18-1. Pin Descriptions Used to Read/Write the EPROM
Pin Name
SDAT
SCLK
VPP (TEST)
RESET
VDD / VSS
Pin No.
7
8
13
16
9/10
During Programming
I/O
Function
I/O Serial data pin. Output port when reading and
input port when writing can be assigned as
Input/push-pull output port respectively.
I/O Serial clock pin. Input only pin.
I
Power supply pin for EPROM cell writing
(indicates that OTP enters into the writing
mode). When 12.5 V is applied, OTP is in
writing mode and when 5 V is applied, OTP is in
reading mode. (Option)
I
Chip initialization
I
Logic power supply pin. VDD should be tied to
+ 5 V during programming.
Table 18-2. Comparison of S3P72H8 and S3C72H8 Features
Characteristic
Program Memory
Operating Voltage (VDD)
OTP Programming Mode
Pin Configuration
EPROM Programmability
S3P72H8
8 K-byte EPROM
1.8 V to 5.5 V
VDD = 5 V, VPP (TEST) = 12.5 V
64 QFP
User Program 1 time
S3C72H8
8 K-byte mask ROM
1.8 V to 5.5 V
64 QFP
Programmed at the factory
OPERATING MODE CHARACTERISTICS
When 12.5 V is supplied to the VPP (TEST) pin of the S3P72H8, the EPROM programming mode is entered. The
operating mode (read, write, or read protection) is selected according to the input signals to the pins listed in
Table 18-3 below.
Table 18-3. Operating Mode Selection Criteria
VDD
VPP
(TEST)
5V
5V
12.5V
12.5V
12.5V
REG/
MEM
0
0
0
1
Address
(A15-A0)
0000H
0000H
0000H
0E3FH
R/W
Mode
1
EPROM read
0
EPROM program
1
EPROM verify
0
EPROM read protection
NOTE: "0" means low level; "1" means high level.
18-3

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