SFH612A 데이터 시트보기 (PDF) - Vishay Semiconductors
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SFH612A Datasheet PDF : 7 Pages
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SFH612A/ SFH655A
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector (load) current
Derate linearly from 25 °C
Power dissipation
Test condition
Coupler
Parameter
Derate linearly from 25 °C
Total power dissipation
Test condition
Isolation test voltage between
input and output, climate acc. to
IEC 60068-1:1988
Creepage distance
Clearance
Comparative tracking index acc.
to DIN IEC 112/VDE 0303, part
1:06-84
Isolation resistance
Storage temperature range
t = 1.0 s
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
Operating temperature range
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥1.5 mm
Symbol
BVCEO
BVECO
IC
Pdiss
Symbol
Ptot
VISO
RIO
RIO
Tstg
Tamb
Value
55
6.0
125
2.00
150
Value
3.33
250
5300
≥ 7.0
≥ 7.0
≥ 175
≥ 1012
≥ 1011
- 55 to + 150
- 55 to + 100
260
Unit
V
V
mA
mW/°C
mW
Unit
mW/°C
mW
VRMS
mm
mm
Ω
Ω
°C
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
IF = 10 mA
VR = 6.0 V
VR = 0, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.15
1.5
V
IR
0.02
10
µA
CO
14
pF
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter dark current
Collector-emitter capacitance
Test condition
ICE = 100 µA
IEC = 10 µA
VCE = 40 V
VCE = 0 V, f=1.0 MHz
Symbol
Min
Typ.
Max
Unit
BVCEO
55
V
BVECO
6.0
V
ICEO
CCE
12
400
nA
13.5
pF
www.vishay.com
2
Document Number 83667
Rev. 1.4, 26-Oct-04
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