SFP9630 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SFP9630 Datasheet PDF : 7 Pages
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SFP9630
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-200 -- -- V
-- -0.17 -- V/oC
-2.0 -- -4.0 V
-- -- -100 nA
-- -- 100
-- -- -10
-- -- -100 µA
-- -- 0.8 Ω
-- 4.2 -- Ω
-- 740 965
-- 125 185 pF
-- 49 75
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-200V
VDS=-160V,TC=125oC
VGS=-10V,ID=-3.3A
O4
VDS=-40V,ID=-3.3A
O4
VGS=0V,VDS=-25V,f =1MHz
See Fig 5
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 14 35
-- 22 55
VDD=-100V,ID=-6.5A,
-- 41 90 ns RG=12Ω
-- 17 45
See Fig 13
O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
-- 29 36
-- 5.8 --
-- 13.6 --
VDS=-160V,VGS=-10V,
nC ID=-6.5A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -6.5
Integral reverse pn-diode
A
-- -26
in the MOSFET
O4 -- -- -5.0 V TJ=25oC,IS=-6.5A,VGS=0V
-- 160 -- ns TJ=25oC,IF=-6.5A
-- 0.96 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=20mH, IAS=-6.5A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
O3 ISD <_-6.5A, di/dt <_400A/µs, VDD_<BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
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