SI2302 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.
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SI2302 Datasheet PDF : 4 Pages
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20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance 1)
BVDSS VGS = 0V, ID = 10uA
RDS(on)
VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance 1)
Dynamic
VGS(th)
IDSS
IGSS
gfs
VDS =VGS, ID = 250uA
VDS = 16V, V GS = 0V
VDS = 20V, V GS = 0V TJ=55oC
VGS = ± 8V, VDS = 0V
VDS = 5V, ID = 3.6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V, I D = 3.6A
VGS = 4.5V
VDD = 10V, RL=5.5 Ω
ID ^ 3.6A,V GEN = 4.5V
RG = 6Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.6A, V GS = 0V
1) Pulse test: pulse width <= 300us, duty cycle<= 2%
SI2302
Min.
Typ.
Miax.
Unit
20
V
70
85
mΩ
85
115
0.6
V
1
uA
10
±100
nA
10
S
5.4
10
0.65
nC
1.6
12
25
36
60
ns
34
60
10
25
340
115
pF
33
1.6
A
1.2
V
２
JinYu
semiconductor
www.htsemi.com
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