SI4104DY-T1-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4104DY-T1-GE3 Datasheet PDF : 10 Pages
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Si4104DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.5
10
0.4
150 °C
1
0.3
25 °C
0.1
0.2
ID = 5 A
125 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.5
0.2
- 0.1
- 0.4
- 0.7
ID = 5 mA
- 1.0
- 1.3
- 50 - 25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.1
0.0
5
25 °C
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
0.01
DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69936
S09-0764-Rev. B, 04-May-09
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