SMBT3904UPN(1999) 데이터 시트보기 (PDF) - Infineon Technologies
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SMBT3904UPN Datasheet PDF : 7 Pages
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SMBT 3904U PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
V(BR)CEO 40
-
-V
V(BR)CBO 40
-
-
V(BR)EBO 5
-
-V
ICBO
-
-
50 nA
hFE
-
40
-
-
70
-
-
100
-
300
60
-
-
30
-
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
V
-
- 0.25
-
-
0.4
VBEsat
V
0.65 - 0.85
-
- 0.95
1) Pulse test: t < 300s; D < 2%
2
Oct-14-1999
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