SMK0460IS 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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SMK0460IS

Advanced N-Ch Power MOSFET

Kodenshi Auk Co., LTD 

SMK0460IS

Advanced N-Ch Power MOSFET

SWITCHING REGULATOR APPLICATION

Features

 Drain-Source breakdown voltage: BVDSS=600V (Min.)

 Low gate charge: Qg=12nC (Typ.)

 Low drain-source On resistance: RDS(on)=2.1Ω (Typ.)

 100% avalanche tested

 RoHS compliant device

Ordering Information

Part Number

SMK0460IS

Marking

SMK0460

Package

I-PAK

(Short Lead)

GDS

I-PAK

Marking Information

SMK

0460

YWW

Column 1, 2: Device Code

Column 3: Production Information

e.g.) YWW

-. Y: Year Code

-. WW: Week Code

Absolute maximum ratings (TC=25C unless otherwise noted)

Characteristic

Symbol

Drain-source voltage

Gate-source voltage

Drain current (DC) *

Drain current (Pulsed) *

Avalanche current (Note 2)

Single pulsed avalanche energy (Note 2)

Repetitive avalanche current (Note 1)

Repetitive avalanche energy (Note 1)

Power dissipation

Junction temperature

Storage temperature range

VDSS

VGSS

ID

Tc=25C

Tc=100C

IDM

IAS

EAS

IAR

EAR

PD

TJ

Tstg

* Limited only maximum junction temperature

Rev. date: 12-MAR-13

KSD-T6Q015-002

Rating

600

30

4

2.53

16

4

225

4

10

48

150

-55~150

Unit

V

V

A

A

A

A

mJ

A

mJ

W

C

C

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