2N03L03 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

2N03L03

OptiMOS® Power-Transistor

Infineon Technologies 

Electrical Characteristics

Parameter

Dynamic Characteristics

Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

SPI80N03S2L-03

SPP80N03S2L-03,SPB80N03S2L-03

Symbol

Conditions

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

RG

td(on)

tr

td(off)

tf

VDS≥2*ID *RDS(on)max, 93

ID =80A

VGS=0V, VDS =25V,

-

f=1MHz

-

-

-

VDD =15V, VGS =10V,

-

ID =40A,

-

RG=1.1Ω

-

-

185 - S

6150 8180 pF

2400 3190

540 810

2.5 - Ω

11.8 17.7 ns

34 51

99 148

90 135

Qgs

VDD =24V, ID =80A

-

19 26 nC

Qgd

-

57 86

Qg

VDD =24V, ID =80A,

- 166 220

VGS=0 to 10V

V(plateau) VDD = 24 V , ID =80A

-

2.9

-V

IS

ISM

VSD

trr

Qrr

TC=25°C

VGS=0V, IF=80A

VR =15V, IF=lS,

diF/dt=100A/µs

-

-

80 A

-

- 320

-

1 1.3 V

-

65 80 ns

-

87 108 nC

Page 3

2003-05-09

Share Link: