Final data
SPI07N60S5
SPP07N60S5, SPB07N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
RthJC
RthJA
-
-
1.5 K/W
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
62
-
35
-
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Drain-source breakdown voltage
V(BR)DSS 600
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
VGS(th)
3.5
ID = 350 µA, Tj = 25 °C
Zero gate voltage drain current, VDS=VDSS
IDSS
VGS = 0 V, Tj = 25 °C
-
VGS = 0 V, Tj = 150 °C
-
Gate-source leakage current
IGSS
-
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance
RDS(on)
-
VGS = 10 V, ID = 4.6 A
-
4.5
0.5
-
-
0.54
-V
5.5
µA
1
100
100 nA
0.6 Ω
1current limited by Tjmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
2002-07-26