SST39SF010A(2016) 데이터 시트보기 (PDF) - Microchip Technology
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SST39SF010A Datasheet PDF : 29 Pages
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© 2002-2016
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Data Sheet
Table 7: DC Operating Characteristics VDD = 4.5-5.5V1
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Power Supply Current
Read2
Program and Erase
ISB1
Standby VDD Current
(TTL input)
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
25 mA CE#=VIL, OE#=WE#=VIH, all I/Os open
35 mA CE#=WE#=VIL, OE#=VIH
3
mA CE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
100 µA CE#=VIHC, VDD=VDD Max
ILI
Input Leakage Current
1
µA VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10 µA VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V VDD=VDD Min
VIH
Input High Voltage
2.0
V VDD=VDD Max
VIHC
Input High Voltage (CMOS) VDD-0.3
V VDD=VDD Max
VOL
Output Low Voltage
0.4
V IOL=2.1 mA, VDD=VDD Min
VOH
Output High Voltage
2.4
V IOH=-400 µA, VDD=VDD Min
T7.10 25022
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 5V for SF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
Table 8: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Program/Erase Operation
100
µs
100
µs
T8.1 25022
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 9: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T9.0 25022
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 10: Reliability Characteristics
Symbol Parameter
Minimum Specification
Units
Test Method
NEND1,2
TDR1
ILTH1
Endurance
Data Retention
Latch Up
10,000
100
100 + IDD
Cycles
Years
mA
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T10.2 25022
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
DS20005022C
04/16
12
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