ST2300
N Channel Enhancement Mode MOSFET
4A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol Typical Unit
VDSS
20
V
VGSS
±12
V
ID
4.0
3.0
A
IDM
13
A
IS
PD
TJ
TSTG
RθJA
1.0
1.25
0.8
150
-55/150
140
A
W
℃
℃
℃/W
2
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www.stansontech.com
ST2300 2005. V1