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ST2301A 데이터 시트보기 (PDF) - STANSON TECHNOLOGY
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ST2301A
P Channel Enhancement Mode MOSFET
STANSON TECHNOLOGY
ST2301A Datasheet PDF : 6 Pages
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ST2301A
P Channel Enhancement Mode MOSFET
-3.0A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
On-State Drain Current
I
D(on)
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
tr
Turn-Off Time
t
d(off)
tf
V
GS
=0V,I
D
=-250uA -20
V
V
DS
=VGS,I
D
=-250uA
-0.45
-1.5 V
V
DS
=0V,V
GS
=
±
12V
V
DS
=-20V,V
GS
=0V
V
DS
=-20V,V
GS
=0V
T
J
=55
℃
V
DS
≦
-5V,V
GS
=-4.5V
V
DS
≦
-5V,V
GS
=-2.5V
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-4.5V,I
D
=-2.8A
V
DS
=-5V,I
D
=-2.8V
±
100 nA
-1
-10
uA
-6
-3
A
0.080
Ω
0.120
6.5
S
I
S
=-1.6A,V
GS
=0V
-0.8 -1.2 V
V
DS
=-6V
V
GS
=-4.5V
I
D
≣
-2.8A
V
DS
=-6V
V
GS
=0V
F=1MH
z
V
DD
=-6V
R
L
=6
Ω
I
D
=-1A
V
GEN
=-4.5V
R
G
=6
Ω
5.8 10
0.85
nC
1.7
415
223
pF
87
13 25
36 60
nS
42 70
34 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2301A 2005. V1
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