STD90N02L-1 데이터 시트보기 (PDF) - STMicroelectronics

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STD90N02L-1

N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET™ III Power MOSFET

STMicroelectronics 

STD90N02L - STD90N02L-1

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD=10V, ID=30A,

RG=4.7Ω, VGS=5V

(see Figure 16)

Min. Typ. Max Unit

12

ns

110

ns

18

ns

8

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM

Source-drain current

Source-drain current (pulsed)

VSD (1) Forward on voltage

ISD=30A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=60A, di/dt = 100A/µs,

VDD=15V, Tj=150°C

(see Figure 18)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

60 A

240 A

1.3 V

36

ns

65

nC

3.6

A

5/17

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