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NCV33033(2007) 데이터 시트보기 (PDF) - ON Semiconductor

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NCV33033
(Rev.:2007)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV33033 Datasheet PDF : 27 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
MC33033, NCV33033
17
17
Rg
D
16
15
12
R
100 mV
C
RS
The addition of the RC filter will eliminate current−limit
instability caused by the leading edge spike on the current
waveform. Resistor RS should be a low inductance type.
Figure 25. Current Waveform Spike Suppression
C
17
C
16
16
Rg
D
15
Rg
D
12
100 mV
D = 1N5819
Series gate resistor Rg will damp any high frequency oscillations caused
by the MOSFET input capacitance and any series wiring induction in the
gate−source circuit. Diode D is required if the negative current into the
Bottom Drive Outputs exceeds 50 mA.
Figure 26. MOSFET Drive Precautions
D SENSEFET
17
G
S
MK
16
C
15
12
100 mV
IB
+
0
t
Base Charge
Removal
The totem pole output can furnish negative base current for
enhanced transistor turn−off, with the addition of capacitor C.
Figure 27. Bipolar Transistor Drive
15
12
100 mV
RS
13 Gnd
Power Ground:
To Input Source Return
VPin
9
[
RS
@ Ipk @ RDS(on)
rDM(on) ) RS
If : SENSEFET = MPT10N10M
RS = 200 Ω , 1/4 W
Then : VPin 9 [ 0.75 Ipk
Virtually lossless current sensing can be achieved with the
implementation of SENSEFET power switches.
Figure 28. Current Sensing Power MOSFETs
VM + 12
VC = 12 V
VM + 8.0
8
4
6
7
VM + 4.0
20 40 60
R
Boost Current (mA)
5
Q
S
3
1.0 μ/200 V
*
VBoost
2
1N5352A * 22
1 MC1455
0.001
18 k
VM = 170 V
* = MUR115
This circuit generates VBoost for Figure 24.
7
19
VA R1
9
VB
R3
R2
10
R4 11
REF
40 k
EA
PWM
ǒ Ǔ ǒ Ǔ VPin 11 + VA
R3 ) R4
R1 ) R2
R2
R3
R4
R3
VB
Figure 29. High Voltage Boost Supply
Figure 30. Differential Input Speed Controller
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