STPS2H100UY 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STPS2H100UY Datasheet PDF : 9 Pages
| |||
Characteristics
1
Characteristics
STPS2H100-Y
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
100
V
IF(AV) Average forward current
SMA / SMB TL = 130 °C δ = 0.5
2
A
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
75
A
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
2400
W
Tstg Storage temperature range
-65 to +175 °C
Tj Operating junction temperature range(1)
-40 to +175 °C
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-l) Junction to lead
SMA
SMB
30
°C/W
25
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
-
Tj = 125 °C
-
Tj = 25 °C
-
VF(2) Forward voltage drop
Tj = 125 °C IF = 2 A
-
Tj = 25 °C
-
IF = 4 A
Tj = 125 °C
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.56 x IF(AV) + 0.045 IF2(RMS)
-
1
µA
0.4
1
mA
-
0.79
0.6 0.65
V
-
0.88
0.69 0.74
2/9
Doc ID 17944 Rev 1
Share Link: 