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STPS30100ST(2018) 데이터 시트보기 (PDF) - STMicroelectronics

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STPS30100ST
(Rev.:2018)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS30100ST Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STPS30100ST
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless
otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV)
Average forward current
Tc = 125 °C, δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
100
V
60
A
30
A
300
A
1900
W
-65 to +175
°C
150
°C
Symbol
Rth(j-c)
Table 2. Thermal resistance parameters
Parameter
Junction to case
Max. value
1
Unit
°C/W
Table 3. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
VR = 70 V
Tj = 25 °C
Tj = 125 °C
IF = 5 A
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 15 A
Tj = 25 °C
Tj = 125 °C
IF = 30 A
Min. Typ.
Max. Unit
-
175
µA
-
20
50
mA
-
60
µA
-
10
20
mA
-
0.475
-
0.385
-
0.555
-
0.475
V
-
0.620 0.660
-
0.525 0.565
-
0.740 0.800
-
0.605 0.655
To evaluate the conduction losses, use the following equation:
P = 0.475 x IF(AV) + 0.006 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
DS5095 - Rev 2
page 2/9

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