STPS40L45CGY-TR 데이터 시트보기 (PDF) - STMicroelectronics

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STPS40L45CGY-TR

Automotive power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS40L45C-Y

Table 2. Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

45

IF(RMS) Forward rms current

30

IF(AV) Average forward current

Tc =130 °C per diode

20

δ = 0.5

per device

40

IFSM Surge non repetitive forward current tp = 10 ms sinusoidal

230

IRRM Repetitive peak reverse current

tp = 2 µs square F = 1 kHz

2

IRSM Non repetitive peak reverse current tp = 100 µs square

3

PARM Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

8100

Tstg Storage temperature range

Tj Operating junction temperature (1)

-65 to + 150

-40 to + 150

dV/dt Critical rate of rise of reverse voltage

10000

1.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistances

V

A

A

A

A

A

W

°C

°C

V/µs

Symbol

Parameter

Value

Unit

Rth (j-c) Junction to case

Rth(c) Coupling

Per diode

Total

1.5

0.8

°C/W

0.1

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

IR(1)

Reverse leakage

current

Tj = 25 °C

VR = VRRM

Tj = 125 °C

Tj = 25 °C IF = 20 A

VF(1)

Tj = 125 °C IF = 20 A

Forward voltage drop

Tj = 25 °C IF = 40 A

Tj = 125 °C IF = 40 A

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.28 x IF(AV) + 0.0105 IF2(RMS)

0.6

mA

140

280

mA

0.53

0.42 0.49

V

0.69

0.6

0.7

2/7

Doc ID 023224 Rev 1

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