STPS40150CW 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
제조사
STPS40150CW Datasheet PDF : 6 Pages
| |||
STPS40150CT/CW/CG
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(j-c) Junction to case
Rth(c)
Parameter
TO-220AB / D2PAK
TO-247
Per diode
Total
Per diode
Total
Coupling
Value
1.2
0.85
1.2
0.85
0.5
Unit
°C/W
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Pulse test : * tp = 380 µs, δ < 2%
Tests Conditions
Tj = 25°C
Tj = 125°C
VR = VRRM
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 20 A
IF = 20 A
IF = 40 A
IF = 40 A
Min. Typ. Max. Unit
2
8
µA
2
11
mA
0.92 V
0.69 0.75
1.00
0.79 0.86
To evaluate the conduction losses use the following equation :
P = 0.64 x IF(AV) + 0.0055 IF2(RMS)
Fig. 1: Conduction losses versus average current
(per diode).
PF(AV)(W)
22
20
18
16
14
12
10
8
6
4
2
0
024
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
6 8 10 12 14 16 18 20 22 24 26 28
Fig. 2: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
2/6
Share Link: 