STPS40170C-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40170C-Y Datasheet PDF : 9 Pages
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STPS40170C-Y
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage, Tj = -40 °C to +175 °C
IF(RMS) Forward rms current
IF(AV) Average forward current
Tc = 150 °C, δ = 0.5
Tc = 145 °C, δ = 0.5
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Operating junction temperature range(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
170
V
60
A
20
A
40
250
A
1015
W
-65 to +175 °C
-40 to +175 °C
Symbol
Rth(j-c)
Rth(c)
Table 2. Thermal resistance parameters
Junction to case
Coupling
Parameter
Per diode
Total
Max. value
1.20
0.85
0.50
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Tj = 25 °C
Tj = 125 °C
IF = 40 A
Min. Typ. Max. Unit
-
30
µA
-
7
30
mA
-
0.92
-
0.69 0.75
V
-
1.00
-
0.79 0.86
To evaluate the conduction losses, use the following equation:
P = 0.64 x IF(AV) + 0.0055 x IF2(RMS)
DS6956 - Rev 2
page 2/9
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