STD1030PL 데이터 시트보기 (PDF) - Samhop Mircroelectronics

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STD1030PL

P -Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S T U/D1030P L

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

Min TypC Max Unit

5 DRAIN-SOURCE DIODE CHARACTERISTICS b

Diode Forward Voltage

VSD VGS = 0V, Is =-10A

-1 -1.3 V

Notes

a.S urface Mounted on FR 4 Board, t 10sec.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

c.Guaranteed by design, not subject to production testing.

20

-V GS =3V

16

-V GS =10,9,8,7,6,5,4V

-V GS =2V

12

8

-V GS =1V

4

0

0

24

6

8

10 12

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

25

25 C

20

-55 C

15

T j=125 C

10

5

0

0.0 0.5

1 1.5 2 2.5 3

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

1000

800

600

C is s

400

200

C oss

0

C rss

0 5 10 15 20 25 30

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

2.2

V G S =-10V

I D =-5 . 3 A

1.8

1.4

1.0

0.6

0.2

0

-50 -25 0 25 50 75 100 125

T j( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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