STU1030PL 데이터 시트보기 (PDF) - Samhop Mircroelectronics

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STU1030PL

P -Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S T U/D1030P L

1.3

V DS =V G S

1.2

ID=-250uA

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0

25 50 75 100 125

T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation

with T emperature

12

10

8

6

4

2

V DS =-15V

0

0

5

10 15

20 25

-IDS , Drain-S ource C urrent (A)

F igure 7. T rans conductance V ariation

with Drain C urrent

10

VDS =-15V

8 ID=-5.3A

6

4

2

0

0 2 4 6 8 10 12 14 16

Qg, T otal G ate C harge (nC )

F igure 9. G ate C harge

4

1.15

ID=-250uA

1.10

1.05

1.00

0.95

0.90

0.85

-50 -25 0 25 50 75 100 125

T j, J unction T emperature ( C )

F igure 6. B reakdown V oltage V ariation

with T emperature

20

10

1

T J=25 C

0

0.4 0.6 0.8 1.0 1.2 1.4

-V S D, B ody Diode F orward V oltage (V )

F igure 8. B ody Diode F orward V oltage

V ariation with S ource C urrent

50

10

R DS(ON) Limit

1

100ms 10ms

1s

DC

0.1 VGS =-10V

S ingle P ulse

0.03 Tc=25 C

0.1

1

10 30 50

-V DS , Drain-S ource V oltage (V )

F igure 10. Maximum S afe

O perating Area

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