STU40N2LH5(2008) 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STU40N2LH5
(Rev.:2008)

N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

STMicroelectronics 

STD40N2LH5 - STU40N2LH5

2

Electrical characteristics

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 4. Static

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

Voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

VGS(th)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS= 0

VDS = 25 V

VDS = 25 V, TC = 125 °C

VGS = ± 22 V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 20 A

SMD version

VGS= 10 V, ID= 20 A

VGS= 5 V, ID= 20 A

SMD version

VGS= 5 V, ID= 20 A

Min. Typ. Max. Unit

25

V

1 µA

10 µA

±100 nA

1

V

0.01 0.012 Ω

0.0106 0.0126 Ω

0.0135 0.017 Ω

0.0141 0.0176 Ω

Table 5. Dynamic

Symbol

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Qgs1

Qgs2

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

RG Gate input resistance

Test conditions

VDS = 25 V, f=1 MHz,

VGS = 0

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 3)

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 8)

f=1 MHz gate bias

Bias= 0 test signal

level=20 mV

open drain

Min Typ. Max. Unit

840

pF

180

pF

29

pF

8

nC

TBD

nC

TBD

nC

TBD

nC

TBD

nC

1.1

Ω

3/12

Share Link: