STU40N2LH5 데이터 시트보기 (PDF) - STMicroelectronics

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STU40N2LH5

N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD40N2LH5, STU40N2LH5

(TCASE = 25°C unless otherwise specified)

Table 4.

Symbol

Static

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

IGSS

VGS(th)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

ID = 250 µA, VGS= 0

VDS = 25 V

VDS = 25 V, TC = 125 °C

VGS = ± 22 V

VDS= VGS, ID = 250 µA

VGS= 10 V, ID= 20 A

SMD version

VGS= 10 V, ID= 20 A

VGS= 5 V, ID= 20 A

SMD version

VGS= 5 V, ID= 20 A

Min. Typ. Max. Unit

25

V

1 µA

10 µA

±100 nA

1

V

0.01 0.0118 Ω

0.0106 0.0124 Ω

0.0135 0.0155 Ω

0.0141 0.0161 Ω

Table 5.

Symbol

Dynamic

Parameter

Ciss

Coss

Crss

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

VDS = 20 V, f=1 MHz,

VGS = 0

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 14)

Min. Typ. Max. Unit

700

pF

-

160

- pF

27

pF

6.3

nC

-

2.4

- nC

2.7

nC

Table 6. Switching on/off (resistive load)

Symbol

Parameter

Test conditions

Min.

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

-

(Figure 13 and Figure 18)

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

-

(Figure 13 and Figure 18)

Typ.

4.8

13.6

17.6

3.5

Max. Unit

ns

-

ns

ns

-

ns

4/15

Doc ID 14919 Rev 3

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