PHK4NQ10T 데이터 시트보기 (PDF) - Philips Electronics
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PHK4NQ10T Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel TrenchMOSTM transistor
Product specification
PHK4NQ10T
FEATURES
• Low on-state resistance
• Fast switching
• Low profile surface mount
package
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDS = 100 V
ID = 4 A
RDS(ON) ≤ 70 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Motor and relay drivers
• d.c. to d.c. converters
The PHK4NQ10T is supplied in the
SOT96-1 (SO8) surface mounting
package.
PINNING
PIN
DESCRIPTION
1-3 source
4 gate
5-8 drain
SOT96-1 (SO8)
876 5
pin 1 index
123 4
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Ptot
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (tp ≤ 10 s)
Drain current (pulse peak value)
Total power dissipation
Operating junction and storage
temperature
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C;
RGS = 20 kΩ
Ta = 25 ˚C
Ta = 70 ˚C
Ta = 25 ˚C
Ta = 25 ˚C, t ≤ 10 s
Ta = 70 ˚C, t ≤ 10 s
MIN.
-
-
-
-
-
-
-
-
- 65
MAX.
100
100
± 20
4
3
16
2.5
1.6
150
UNIT
V
V
V
A
A
A
W
W
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-a
Rth j-a
Thermal resistance junction
to ambient
Thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t ≤ 10 sec
Surface mounted, FR4 board
TYP.
-
150
MAX.
50
-
UNIT
K/W
K/W
August 1999
1
Rev 1.000
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