Philips Semiconductors
4 × 44 W into 4 Ω or 4 × 75 W into 2 Ω
quad BTL car radio power amplifier
9 THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
Rth(j-c)
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
see Fig.11
Preliminary specification
TDA8591J
VALUE
40
1
UNIT
K/W
K/W
handbook, halfpage
OUT1
virtual junction
OUT2
OUT3
OUT4
2 K/W
2 K/W
2 K/W
2 K/W
0.5 K/W
case
MGT602
Fig.11 Equivalent thermal resistance network.
10 QUALITY SPECIFICATION
Quality according to “SNW-FQ-611E”.
11 DC CHARACTERISTICS
Tamb = 25 °C; RL = ∞; VP = VP1 = VP2 = VP3 = 14.4 V; measured in the circuit of Fig.29; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
VP
Iq(tot)
Istb
VO
VP(mute)
VP(mute)(hys)
VOO
supply voltage
total quiescent current
standby current
DC output voltage
low supply voltage mute
low supply voltage mute
hysteresis
output offset voltage
8.0
120
−
−
operating to mute mode
6.0
mute to operating mode
6.3
−
mute mode; VMUTE/ON = 0 V
−
operating mode; VMUTE/ON = 5 V −
14.4 18.0 V
200
290
mA
2
50
µA
7.2
−
V
7.0
8.0
V
7.0
8.5
V
0.4
−
V
0
30
mV
0
60
mV
2002 Jan 14
14