Philips Semiconductors
GreenChip™II SMPS control IC
Preliminary specification
TEA1507
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Burst mode standby (pin 3)
Vth(burst)(on)
burst mode standby active threshold
voltage
at Iburst = 6 mA
Ith(burst)(on)
Ith(burst)(off)
t(burst-blank)
burst mode standby active current
burst mode standby inactive current
burst mode standby blanking time
Valley switch (pin 8)
∆V/∆tvalley
tvalley-swon
∆V/∆t for valley recognition
delay from valley recognition to switch-on
Current and short winding protection (pin 5)
Vsense(max)
tpropagation
maximum source voltage OCP
delay from detecting Vsense(max) to
switch-off
∆V/∆t = 0.1 V/µs
∆V/∆t = 0.5 V/µs
Vswp
tleb
short winding protection voltage
blanking time for current and short
winding protection
Iss
soft start current
Vsense < 0.5 V
Overvoltage protection (pin 4)
I(OVP)(DEM)
OVP protection level at pin 4, set by the
demagnetization resistor RDEM; see
Section “OverVoltage Protection (OVP)”
3.3 3.8 4.3 V
16 −
−
mA
−
−
6
mA
25 30 35 µs
−85 −
+85 V/µs
−
150(1) −
ns
0.48 0.52 0.56 V
−
140 185 ns
0.83 0.88 0.96 V
300 370 440 ns
45 60 75 µA
54 60 66 µA
Overpower protection (pin 4)
I(OPP)(DEM)
OPP current at pin 4, start of OPP
correction. Set by the demagnetization
resistor RDEM; see Section “OverPower
Protection (OPP)”
I(OPP50%)(DEM) OPP current at pin 4 where maximum
source voltage is limited to 0.3 V
−
−24 −
µA
−
−100 −
µA
Driver (pin 6)
Isource
Isink
source current capability of driver
sink current capability of driver
Vo(driver)(max) maximum output voltage of the driver
Temperature protection
Tprot(max)
Tprot(hyst)
maximum temperature threshold
hysteresis temperature
Note
1. Guaranteed by design.
VCC = 9.5 V; VDRIVER = 2 V −
−170 −88 mA
VCC= 9.5 V; VDRIVER = 2 V −
300 −
mA
VCC = 9.5 V;
VDRIVER = 9.5 V
400 700 −
mA
VCC > 12 V
−
11.5 12 V
130 140 150 °C
−
8(1) −
°C
2000 Dec 05
12