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TEA1532BT 데이터 시트보기 (PDF) - NXP Semiconductors.

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TEA1532BT
NXP
NXP Semiconductors. NXP
TEA1532BT Datasheet PDF : 23 Pages
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NXP Semiconductors
TEA1532BT; TEA1532CT
GreenChip II SMPS control IC
10. Characteristics
Table 5. Characteristics
Symbol
Parameter
Conditions
Start-up current source (pin DRAIN)
IDRAIN
current on pin DRAIN
VDRAIN > 100 V
VCC = 0 V
with auxiliary supply
VBR
Vmains(oper)(en)
breakdown voltage
mains-dependent
operation-enabling
voltage
Supply voltage management (pin VCC)
Vstartup
start-up voltage
Vth(UVLO)
undervoltage lockout
threshold voltage
Vhys
Ich(high)
Ich(low)
Irestart
ICC(oper)
hysteresis voltage
high charging current
low charging current
restart current
operating supply
current
Vstartup Vth(UVLO)
VDRAIN > 100 V;
VCC < 3 V
VDRAIN > 100 V;
3 V < VCC < Vth(UVLO)
VDRAIN > 100 V;
Vth(UVLO) < VCC < Vstartup
no load on pin DRIVER
Demagnetization management (pin DEM)
Vth(DEM)
threshold voltage on pin
DEM
Vth(det)(CCM)
continuous conduction
mode detection
threshold voltage
VCL(neg)
VCL(pos)
tsup(xfmr_ring)
negative clamp voltage
positive clamp voltage
transformer ringing
suppression time
IDEM = 500 µA
IDEM = 250 µA
at start of secondary
stroke
Pulse width modulator
ton(min)
ton(max)
δmax
Oscillator
minimum on-time
maximum on-time
maximum duty cycle
QR mode
fosc
oscillator frequency
VCTRL < 1 V
Min
Typ
Max
Unit
1.0
1.2
1.4
mA
-
100
300
µA
650
-
-
V
60
-
100
V
10.3
8.1
2.0
1.2
1.2
650
1.1
11
11.7
V
8.7
9.3
V
2.3
2.6
V
1
0.8
mA
0.75
0.45
mA
550
450
µA
1.3
1.5
mA
50
80
110
mV
80
50
20
mV
0.5
0.45
0.40
V
0.5
0.7
0.9
V
1.1
1.5
1.9
µs
-
tleb
-
ns
20
25
30
µs
67
70
73
%
100
125
150
kHz
TEA1532BT_TEA1532CT_1
Product data sheet
Rev. 01 — 18 January 2007
© NXP B.V. 2007. All rights reserved.
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