TGA8399C 데이터 시트보기 (PDF) - TriQuint Semiconductor
부품명
상세내역
제조사
TGA8399C Datasheet PDF : 7 Pages
| |||
Product Data Sheet
August 5, 2008
TGA8399C
TABLE II
DC PROBE TESTS
(TA = 25 °C, Nominal)
Symbol
VP
BVGS
BVGD
Parameter
Pinch-off Voltage
Breakdown Voltage gate-source
Breakdown Voltage gate-drain
Minimum
-1.5
-30
-30
Maximum
-0.5
-8
-8
Value
V
V
V
TABLE III
RF CHARACTERIZATION TABLE
(TA = 25 °C, Nominal)
Vd = 5 V
Symbol Parameter
Gain
IRL
ORL
Small Signal Gain
Input Return Loss
Output Return Loss
Test
Condition
F = 8 – 18 GHz
F = 8 – 18 GHz
F = 8 – 18 GHz
Limit
Min Nom Max
12 16 ---
--- -18 -12
--- -20 -12
Units
dB
dB
dB
Parameter
RθJC Thermal
Resistance
(channel to backside of
carrier)
TABLE IV
THERMAL INFORMATION
Test Conditions
TCH
(oC)
Vd = 4.5 V
Id = 50 mA
89
Pdiss = 0.225 W
RθJC
TM
(°C/W) (Hours)
85 4.1 E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
CuMo Carrier at 70oC baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Share Link: 