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TLP521-1GBF 데이터 시트보기 (PDF) - Toshiba
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TLP521-1GBF
Photocoupler GaAs Ired & Photo−Transistor
Toshiba
TLP521-1GBF Datasheet PDF : 9 Pages
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9
TLP521
−
1,TLP521
−
2,TLP521
−
4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector
−
emitter
breakdown voltage
Emitter
−
collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
Test Condition
V
F
I
F
= 10 mA
I
R
V
R
= 5 V
C
T
V = 0, f = 1 MHz
V
(BR) CEO
I
C
= 0.5 mA
V
(BR) ECO
I
E
= 0.1 mA
I
CEO
C
CE
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
Min Typ. Max Unit
1.0 1.15 1.3
V
—
—
10
μ
A
—
30
—
pF
55
—
—
V
7
—
—
V
—
10 100 nA
—
2
50
μ
A
—
10
—
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector
−
emitter
saturation voltage
Symbol
Test Condition
I
C
/ I
F
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
Rank GB
V
CE (sat)
I
C
= 2.4 mA, I
F
= 8 mA
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
MIn Typ. Max Unit
50
—
600
%
100
—
600
—
60
—
%
30
—
—
—
—
0.4
—
0.2
—
V
—
—
0.4
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Symbol
Test Condition
C
S
V
S
= 0, f = 1 MHz
R
S
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min Typ. Max Unit
—
0.8
—
pF
—
10
11
—
Ω
2500 —
—
Vrms
— 5000 —
— 5000 — Vdc
4
2007-10-01
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