TM200GZ-H 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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TM200GZ-H Datasheet PDF : 4 Pages
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MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
M
VRRM
Repetitive peak reverse voltage
400
VRSM
Non-repetitive peak reverse voltage
480
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage
400
VDSM
Non-repetitive peak off-state voltage
480
VD (DC)
DC off-state voltage
320
Voltage class
H
24
800
1200
960
1350
640
960
800
1200
960
1350
640
960
Symbol
Parameter
IT (RMS), IF (RMS) RMS current
IT (AV), IF (AV) Average current
ITSM, IFSM Surge (non-repetitive) current
I2t
I2t for fusing
di/dt
Critical rate of rise of on-state current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
Viso
Isolation voltage
Conditions
Single-phase, half-wave 180° conduction, TC=67°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
VD=1/2VDRM, IG=1.0A, Tj=125°C
Charged part to case
—
Mounting torque
Main terminal screw M8
Mounting screw M6
—
Weight
Typical value
H
1600
1700
1280
1600
1700
1280
Ratings
310
200
4000
6.7 × 104
100
10
3.0
10
5.0
4.0
–40~125
–40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Unit
V
V
V
V
V
V
Unit
A
A
A
A2s
A /µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
IDRM
VTM, VFM
dv/dt
VGT
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current Tj=125°C, VRRM applied
Repetitive peak off-state current Tj=125°C, VDRM applied
Forward voltage
Tj=125°C, ITM=IFM=600A, instantaneous meas.
Critical rate of rise of off-state voltage Tj=125°C, VD=2/3VDRM
Gate trigger voltage
Tj=25°C, VD=6V, RL=2Ω
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
Gate trigger current
Tj=25°C, VD=6V, RL=2Ω
Thermal resistance
Junction to case (per 1/2 module)
Contact thermal resistance
Case to fin, conductive grease applied (per 1/2 module)
—
Insulation resistance
Measured with a 500V megohmmeter between main terminal
and case
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Min.
—
—
—
500
—
0.25
15
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
10
—
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/ W
°C/ W
MΩ
Feb.1999
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