Philips Semiconductors
2.7 GHz I2C-bus controlled low phase
noise frequency synthesizer
Product specification
TSA5059A
CHARACTERISTICS
VCC = 4.75 to 5.25 V; Tamb = −20 to +85 °C; fxtal = 4 MHz; measured according to Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (pin VCC)
VCC
ICC
VCC(POR)
supply voltage
supply current
Tamb = 25 °C
supply voltage below which POR is active Tamb = 25 °C
RF inputs (pins RFA and RFB)
4.75 5.0
5.25 V
30
37
45
mA
−
2.75 −
V
fi(RF)
RF input frequency
Vi(RF)(rms) RF input voltage (RMS value)
Zi(RF)
Ci(RF)
MDR
RF input impedance
RF input capacitance
main divider ratio
900
−
fi(RF) between 900 and 7.1
−
2200 MHz; note 1
−30
−
fi(RF) between 2.2 and 22.4 −
2.7 GHz; notes 1 and 2 −20
−
see Fig.6
−
−
see Fig.6
−
−
prescaler disabled
64
−
prescaler enabled
128
−
2700 MHz
300
mV
+2.5 dBm
300
mV
+2.5 dBm
−
Ω
−
pF
131 071
262 142
Crystal oscillator (pin XTAL)
fxtal
crystal frequency
4
−
16
MHz
ZXTAL crystal oscillator negative impedance
4 MHz crystal
400
680
−
Ω
ZXTAL
recommended crystal series resistance 4 MHz crystal
−
−
200
Ω
PXTAL
crystal drive level
4 MHz crystal; note 3 −
40
−
µW
fi(ext)
external reference input frequency
note 4
2
−
20
MHz
Vi(ext)(p-p) external reference input voltage
(peak-to-peak value)
note 4
200
−
500
mV
Phase comparator and charge pump
fcomp
Ncomp
Icp
comparison frequency
equivalent phase noise at the phase
detector input
charge pump current
ILO(cp)
charge pump output leakage current
DRIVE output (pin DRIVE)
−
fcomp = 250 kHz;
−
C1 = C0 = 1;
in the loop bandwidth
C1 = 0; C0 = 0
100
C1 = 0; C0 = 1
210
C1 = 1; C0 = 0
450
C1 = 1; C0 = 1
920
−10
−
2
−157 −
MHz
dBc/Hz
135
170
µA
280
350
µA
600
750
µA
1230 1540 µA
0
+10 nA
VO(drive) output voltage when the charge pump is XCE = 0; XCS = 1;
−
sinking current
T2 = 0; T1 = 0; T0 = 0
140
250
mV
IO(drive) output current when the charge pump is XCE = 0; XCS = 1;
100
250
−
µA
sourcing current
T2 = 0; T1 = 0; T0 = 1
2000 Oct 24
12