2N6427(2001) 데이터 시트보기 (PDF) - ON Semiconductor

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2N6427
(Rev.:2001)

Darlington Transistors NPN Silicon

ON Semiconductor 

ON Semiconductort

Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

VCEO

VCBO

VEBO

IC

PD

PD

TJ, Tstg

Value

40

40

12

500

625

5.0

1.5

12

–55 to +150

Symbol

Max

RqJA

200

RqJC

83.3

Unit

Vdc

Vdc

Vdc

mAdc

mW

mW/°C

Watts

mW/°C

°C

Unit

°C/W

°C/W

2N6426*

2N6427

*ON Semiconductor Preferred Device

1

2

3

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

COLLECTOR 3

BASE

2

EMITTER 1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(IC = 10 mAdc, VBE = 0)

V(BR)CEO

40

—

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

40

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

—

Vdc

Collector Cutoff Current

(VCE = 25 Vdc, IB = 0)

ICES

—

—

1.0

mAdc

Collector Cutoff Current

(VCB= 30 Vdc, IE = 0)

ICBO

—

—

50

nAdc

Emitter Cutoff Current

(VEB= 10 Vdc, IC = 0)

IEBO

—

—

50

nAdc

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

© Semiconductor Components Industries, LLC, 2001

1

February, 2001 – Rev.1

Publication Order Number:

2N6426/D

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