2N6427(2001) 데이터 시트보기 (PDF) - ON Semiconductor

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2N6427
(Rev.:2001)

Darlington Transistors NPN Silicon

ON Semiconductor 

2N6426 2N6427

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

ON CHARACTERISTICS

DC Current Gain(1)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

2N6426

2N6427

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N6426

2N6427

(IC = 500 mAdc, VCE = 5.0 Vdc)

2N6426

2N6427

Collector–Emitter Saturation Voltage

(IC = 50 mAdc, IB = 0.5 mAdc)

(IC = 500 mAdc, IB = 0.5 mAdc

Base–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

Base–Emitter On Voltage

(IC = 50 mAdc, VCE = 5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N6426

2N6427

Small–Signal Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N6426

2N6427

Current–Gain — High Frequency

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

2N6426

2N6427

Output Admittance

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

VCE(sat)

VBE(sat)

VBE(on)

Cobo

Cibo

hie

hfe

|hfe|

hoe

NF

Min

Typ

Max

Unit

20,000

10,000

—

— 200,000

— 100,000

30,000

20,000

— 300,000

— 200,000

20,000

14,000

— 200,000

— 140,000

Vdc

—

0.71

1.2

—

0.9

1.5

—

1.52

2.0

Vdc

—

1.24

1.75

Vdc

—

5.4

—

10

100

—

50

—

20,000

—

10,000

—

1.5

2.4

1.3

2.4

—

—

—

3.0

7.0

pF

15

pF

2000

1000

—

—

—

—

1000

kΩ

—

—

mmhos

10

dB

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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