VDD18SCTA 데이터 시트보기 (PDF) - AnaSem Semiconductors

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VDD18SCTA

Low voltage, low power consumption, ± 1% high precision voltage detection Built-in delay circuit CMOS voltage detector

AnaSem Semiconductors 

Rev. C09-09

低电压, 低功耗, ±1% 高精度电压检测内置延迟电路 CMOS 电压检测器

VDD 系列

一般特征 – N-沟道驱动 vs. VDS

z VDD181SCTA (CMOS 1.8V)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Ta=25°C

VIN=0.8V

VVIINN==00..77VV

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VDS (V)

z VDD251SCTA (CMOS 2.5V)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Ta=25°C

VIN=01.85V

VVIINN==01..70VV

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VDS (V)

z VDD351SCTA (CMOS 3.5V)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Ta=25°C

VIN=0.8V

VVIINN==00..77VV

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VDS (V)

z VDD451MCTA (CMOS 4.5V)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

Ta=25°C

VIN=0.8V

VVIINN==00..77VV

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VDS (V)

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