VBT1060C-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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VBT1060C-E3 Datasheet PDF : 6 Pages
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VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
V(B,I)T1060C
10
8
6
VFT1060C
4
2
Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
4.0
D = 0.5 D = 0.8
3.5
D = 0.3
3.0
D = 0.2
2.5
2.0
D = 0.1
D = 1.0
1.5
T
1.0
0.5
D = tp/T
tp
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
10
Junction to Case
VFT1060C
V(B,I)T1060C
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance Per Diode
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 14-Dec-16
3
Document Number: 89131
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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