VBT3080C-E3(2014) 데이터 시트보기 (PDF) - Vishay Semiconductors
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VBT3080C-E3 Datasheet PDF : 5 Pages
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VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
per diode
Reverse current per diode
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
VR = 80 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.52
0.58
0.75
0.46
0.52
0.65
30
20
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
0.82
-
-
0.70
700
35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VT3080C VFT3080C
per diode
2.5
6.0
Typical thermal resistance
RJC
per device
2.0
5.0
VBT3080C
2.5
2.0
VIT3080C
2.5
2.0
UNIT
V
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
VT3080C-E3/4W
1.89
ITO-220AB
VFT3080C-E3/4W
1.76
TO-263AB
VBT3080C-E3/4W
1.39
TO-263AB
VBT3080C-E3/8W
1.39
TO-262AA
VIT3080C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
V(B,I)T3080C
20
VFT3080C
15
10
5
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.5 D = 0.8
12
D = 0.3
D = 0.2
10
D = 0.1
8
D = 1.0
6
T
4
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 22-Dec-14
2
Document Number: 89168
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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