W25Q16DW(2011) 데이터 시트보기 (PDF) - Winbond

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W25Q16DW
(Rev.:2011)

1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

Winbond 

W25Q16DW

11.4 DC Electrical Characteristics

PARAMETER

Input Capacitance

Output Capacitance

SYMBOL CONDITIONS

CIN(1)

Cout(1)

VIN = 0V(1)

VOUT = 0V(1)

SPEC

MIN

TYP

MAX

6

8

Input Leakage

ILI

±2

I/O Leakage

ILO

±2

Standby Current

ICC1

/CS = VCC,

VIN = GND or VCC

10

40

Power-down Current

ICC2

/CS = VCC,

VIN = GND or VCC

1

5

Current Read Data /

Dual /Quad 1MHz(2)

ICC3

C = 0.1 VCC / 0.9 VCC

DO = Open

15

Current Read Data /

Dual /Quad 50MHz(2)

ICC3

C = 0.1 VCC / 0.9 VCC

DO = Open

20

Current Read Data /

Dual /Quad 80MHz(2)

ICC3

C = 0.1 VCC / 0.9 VCC

DO = Open

30

Current Read Data /

Dual Output Read/Quad

Output Read 104MHz(2)

ICC3

C = 0.1 VCC / 0.9 VCC

DO = Open

40

Current Write Status

Register

ICC4

/CS = VCC

8

12

Current Page Program ICC5

/CS = VCC

20

25

Current Sector/Block

Erase

ICC6

/CS = VCC

20

25

Current Chip Erase

ICC7

/CS = VCC

20

25

Input Low Voltage

VIL

–0.5

VCC x 0.3

Input High Voltage

VIH

VCC x 0.7

VCC + 0.4

Output Low Voltage

VOL

IOL = 100 µA

0.2

Output High Voltage

VOH

IOH = –100 µA

VCC – 0.2

Notes:

1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 1.8V.

2. Checker Board Pattern.

UNIT

pF

pF

µA

µA

µA

µA

mA

mA

mA

mA

mA

mA

mA

mA

V

V

V

V

- 71 -

Publication Release Date: April 01, 2011

Preliminary - Revision A

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