29F128G08CEAAA 데이터 시트보기 (PDF) - Micron Technology

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29F128G08CEAAA

NAND Flash Memory

Micron Technology 

Micron Confidential and Proprietary

Advance

64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND

Package Dimensions

Figure 6: 52-Pad VLGA

40X Ø0.71

12X Ø11

See Detail A

Seating

plane

A

0.06 A

See Note 1

Detail A2

Not to scale

6 CTR

4 CTR

8

765 4 321

0

Terminal A1 ID

Substrate material: plastic laminate

Mold compound: epoxy novolac

Terminal A1 ID

OA

OB

OC

13 12 10

CTR CTR CTR

2

TYP OD

OE

OF

A

B

C

D

E

F

G 18 ±0.1

H

J

K

L

M2

N TYP

2 TYP

10 CTR

14 ±0.1

0.91

+0.09

-0.10

Notes:

1. Pads are nonsolder mask defined (NSMD) and are plated with 3–15 microns of nickel

followed by a minimum of 0.1 microns of soft wire bondable gold (99.99% pure).

2. Primary datum A (seating plane) is defined by the bottom terminal surface. Metallized

test terminal lands or interconnect terminals need not extend below the package bot-

tom surface.

3. All dimensions are in millimeters.

PDF: 09005aef83d2277a

Rev. A 11/09 EN

15

Micron Technology, Inc. reserves the right to change products or specifications without notice.

©2009 Micron Technology, Inc. All rights reserved.

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