STE140NF20D 데이터 시트보기 (PDF) - STMicroelectronics

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STE140NF20D

N-channel 200 V, 10 mΩ typ., 140 A STripFET™ II Power MOSFET (with fast diode) in an ISOTOP package

STMicroelectronics 

STE140NF20D

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(1)

PTOT

IAR(2)

EAS(3)

dv/dt(4)

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC=100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Avalanche current, repetitive or not repetitive

Single pulse avalanche energy

Peak diode recovery voltage slope

VISO Insulation winthstand voltage (AC-RMS)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. Pulse width limited by Tjmax

3. Strating Tj = 25 °C, ID = IAR, VDD = 50 V

4. ISD ≤ 140 A, di/dt ≤ 1000 A/µs, VDD ≤ 80% V(BR)DSS

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-amb

Thermal resistance junction-case

Thermal resistance junction-ambient

Electrical ratings

Value

200

± 20

140

88

560

500

140

800

25

2500

- 55 to 150

Unit

V

V

A

A

A

W

A

mJ

V/ns

V

°C

Value

0.25

40

Unit

°C/W

°C/W

Doc ID 15299 Rev 4

3/13

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