RMPA61800 데이터 시트보기 (PDF) - Raytheon Company
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RMPA61800 Datasheet PDF : 7 Pages
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RMPA61800
Dual Channel 6-18 GHz 2 Watt Power
Amplifier MMIC
PRELIMINARY INFORMATION
Application
Note
Scope:
This application note briefly describes the procedure for evaluating the Raytheon RMPA61800, high efficiency
0.25 µm PHEMT Dual Channel Amplifier. The chip configuration incorporates two stages of reactively combined
amplifiers at the output preceded by an input amplifier stage.
Carrier Assembly:
The attached drawing shows a recommended off chip bias scheme for the RMPA61800. The MMIC is mounted on
a Cu shim or ridge, which in turn blazed to Cu-Mo-Cu, or Cu-W, or Mo carrier with alumina 50-ohm microstrip lines
for in/out RF connections and off-chip DC bias components. The drawing shows the placement of components and
bond wire connections. The following should be noted:
(1) 1 mil gold bond wires are used on the carrier
assembly.
(2) Use 3-1 mil gold wires about 25 mils in length for
optimum RF performance.
(3) Vg: Gate Voltage (negative) input terminal for
amplifier stages. For best results, the gate supply
should have a source resistance less than 100
ohms.
(4) Vd: Drain Voltage (positive) input terminal for
amplifier stages.
(5) Vg and Vd on both sides of the MMIC must be
biased to insure proper operation.
(6) Bias decoupling capacitors of 0.01 uF (multilayer)
and 100 pF (single layer) are used on the carrier.
(7) Close placement of external components is
essential to stability.
(8) The test fixture may require a pair of 25 µF
capacitor on the drain and gate(optional) bias
terminals to prevent oscillations caused by the test
fixture connections.
(9) For Laboratory testing, use good power supplies.
Set current limits on supplies to RF drive-up
current level. Keep supply wire/leads as short as
possible and if required use additional bypass
capacitors at the fixture terminals.
Figure 3
Recommended
Application Schematic
Circuit Diagram
(single channel
represented)
Bias application is
identical for each
channel.
Drain Supply (Vd= +8 V)*
10,000pF
Bond Wire Ls
MMIC Chip
L 100pF
L
RF IN
RF OUT
www.raytheonrf.com
L
Ground
(Back of Chip)
100pF
L
10,000pF
Gate Supply (Vg)*
Bond Wire Ls
*Vg and Vd on both sides of the MMIC must be biased to insure proper operation.
Characteristic performance data and specifications are subject to change without notice.
Revised January 25, 2002
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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