2SB1188T100R 데이터 시트보기 (PDF) - ROHM Semiconductor

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2SB1188T100R

Medium power transistor (−32V, −2A)

ROHM Semiconductor 

Transistors

2SB1188 / 2SB1182 / 2SB1240

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage BVCBO −40

−

−

V IC=−50µA

Collector-emitter breakdown voltage BVCEO −32

−

−

V IC=−1mA

Emitter-base breakdown voltage

BVEBO

−5

−

−

V IE=−50µA

Collector cutoff current

ICBO

−

−

−1

µA VCB=−20V

Emitter cutoff current

IEBO

−

−

−1

µA VEB=−4V

Collector-emitter saturation voltage

VCE(sat)

−

−0.5 −0.8

V

IC/IB=−2A/−0.2A

∗

DC current transfer ratio

hFE

82

−

390

− VCE=−3V, IC=−0.5A

∗

Transition frequency

fT

−

100

− MHz VCE=−5V, IE=0.5A, f=30MHz

Output capacitance

∗ Measured using pulse current.

Cob

−

50

−

pF VCB=−10V, IE=0A, f=1MHz

!Packaging specifications and hFE

Type

2SB1188

2SB1182

2SB1240

Package

Code

hFE Basic ordering unit (pieces)

PQR

PQR

PQR

T100

1000

−

−

Taping

TL

2500

−

−

TV2

2500

−

−

hFE values are classified as follows :

Item

P

Q

hFE

82~180 120~270

R

180~390

!Electrical characteristic curves

−1000 Ta=100°C

−500

25°C

−40°C

−200

−100

−50

VCE=−3V

−20

−10

−5

−2

−1

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

−0.5

Ta=25°C −2.5mA

−0.4

−0.3

−0.2

−2.25mA

−2mA

−1.75mA

−1.5mA

−1.25mA

−1mA

−750µA

−500µA

−0.1

−250µA

0

IB=0A

0

−0.4 −0.8 −1.2 −1.6 −2

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics

500

Ta=25°C

VCE=−6V

−3V

−1V

200

100

50

20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000

COLLECTOR CURRENT : IC (mA)

Fig.3 DC current gain vs.

collector current ( Ι )

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