2SB1188T100P 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1188T100P Datasheet PDF : 3 Pages
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Transistors
2SB1188 / 2SB1182 / 2SB1240
500
Ta=100°C
25°C
−25°C
200
100
50
VCE=−3V
20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( ΙΙ )
−500 Ta=25°C
−500 lC/lB=10
−200
−100
IC/IB=50
−50
20
10
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
−200
−100
Ta=100°C
25°C
−40°C
−50
−20
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Ta=25°C
−1
−0.5
IC /IB=10
−0.2
−0.1
−0.05
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLETOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
500
Ta=25°C
300
Ta=25°C
VCE=−5V
200
Cib
f=1MHz
IE=0A
IC=0A
100
200
Cob
50
100
20
50
10
5 10 20 50 100 200 500 1000 2000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
−0.5 −1 −2
−5 −10 −20 −30
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
−5
IC Max. (pulse)
−2
−1
−0.5
−0.2
DC
−0.1
−0.05
Ta=25°C
∗Single
−0.02 nonrepetitive
−0.01 pulse
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
(2SB1188)
−5
IC Max. (Pulse)
PW=500µs
−2
DC
−1
−0.5
PW=1ms
−0.2
PW=100ms
−0.1
−0.05
Ta=25°C
−0.02
∗Single
nonrepetitive
−0.01 pulse
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operation area
(2SB1182)
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