BUK446-1000B 데이터 시트보기 (PDF) - Philips Electronics
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BUK446-1000B Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Product Specification
BUK446-1000B
VGS / V
12
10
BUK456-1000
VDS / V =200
8
800
6
4
2
0
0
10
20
30
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 3.5 A; parameter VDS
IF / A
10
BUK456-1000A
8
150 C
25 C
6
4
2
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
May 1995
5
Rev 1.200
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