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BF908 데이터 시트보기 (PDF) - Philips Electronics
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BF908
Dual-gate MOS-FETs
Philips Electronics
BF908 Datasheet PDF : 8 Pages
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Philips Semiconductors
Dual-gate MOS-FETs
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V
DS
drain-source voltage
I
D
drain current
±
I
G1
gate 1 current
±
I
G2
gate 2 current
P
tot
total power dissipation
see Fig.3; note 1
BF908
up to T
amb
= 50
°
C
BF908R
up to T
amb
= 40
°
C
T
stg
storage temperature
T
j
operating junction temperature
Note
1. Device mounted on a printed-circuit board.
250
hand
P
b
to
oo
t
k, halfpage
(mW)
200
BF908
150
BF908R
100
50
0
0
50
100
MRC275
150
200
Tamb (
o
C)
Product specification
BF908; BF908R
MIN.
−
−
−
−
MAX.
12
40
10
10
UNIT
V
mA
mA
mA
−
200
mW
−
200
mW
−
65
+150
°
C
−
150
°
C
Fig.3 Power derating curves.
1996 Jul 30
3
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