2N2102 데이터 시트보기 (PDF) - Comset Semiconductors
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2N2102 Datasheet PDF : 3 Pages
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NPN 2N2102
MEDIUM POWER AMPLIFIER & SWITCH
The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
They are intended for a wide variety of small-signall and medium power applications
in military and industrial equipments.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCER
VEBO
IC
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 10 Ω)
Emitter-Base Voltage
Collector Current
PD
Total Power Dissipation
TJ
Junction Temperature
TStg
Storage Temperature range
Tamb= 25°C
Tcase= 25°C
Value
65
120
80
7
1
1
5
-65 to 200
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
Rthj-a
Thermal Resistance, Junction-case
thermal resistance from junction to ambient in free air
Value
35
175
Unit
V
V
V
V
A
W
°C
Unit
°C/ W
COMSET SEMICONDUCTORS
1/3
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