2N7000 데이터 시트보기 (PDF) - Philips Electronics

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2N7000

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

2N7000

FEATURES

• Low RDS(on)

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a TO-92

variant envelope, intended for use in

relay, high-speed and line

transformer drivers.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS MAX. UNIT

VDS

drain-source voltage

60

V

ID

drain current

DC value

280 mA

RDS(on) drain-source on-resistance

ID = 500 mA 5

Ω

VGS = 10 V

VGS(th) gate-source threshold voltage ID = 1 mA

3

V

VGS = VDS

PIN CONFIGURATION

PINNING - TO-92 VARIANT

PIN

DESCRIPTION

1 drain

2 gate

3 source

handbook, halfpage

1

2

3

d

g

MAM146

s

Fig.1 Simplified outline and symbol.

April 1995

2

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