2N7000 데이터 시트보기 (PDF) - Philips Electronics

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2N7000

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

2N7000

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VDS

VDG

±VGSO

ID

IDM

Ptot

Tstg

Tj

drain-source voltage

drain-gate voltage

gate-source voltage

drain current

drain current

total power dissipation

storage temperature range

junction temperature

open drain

DC value

peak value

Tamb = 25 °C

MIN. MAX. UNIT

−

60 V

−

60 V

−

40 V

−

280 mA

−

1.3 A

−

830 mW

−55 150 °C

−

150 °C

THERMAL RESISTANCE

SYMBOL

Rth j-a

PARAMETER

from junction to ambient

VALUE

150

UNIT

K/W

April 1995

3

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