2N7000 데이터 시트보기 (PDF) - Philips Electronics

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2N7000

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

V(BR)DSS

drain-source breakdown voltage

IDSS

drain-source leakage current

±IGSS

gate-source leakage current

VGS(th)

gate-source threshold voltage

RDS(on)

drain-source on-resistance

 Yfs

Ciss

Coss

Crss

transfer admittance

input capacitance

output capacitance

feedback capacitance

Switching times (see Figs 2 and 3)

ton

turn-on time

toff

turn-off time

Product specification

2N7000

CONDITIONS

ID = 10 µA

VGS = 0

VDS = 48 V

VGS = 0

±VGS = 15 V

VDS = 0

ID = 1 mA

VGS = VDS

ID = 500 mA

VGS = 10 V

ID = 75 mA

VGS = 4.5 V

ID = 200 mA

VDS = 10 V

VDS = 10 V

VGS = 0

f = 1 MHz

VDS = 10 V

VGS = 0

f = 1 MHz

VDS = 10 V

VGS = 0

f = 1 MHz

MIN. TYP. MAX. UNIT

60 90 −

V

−

−

1

µA

−

−

10 nA

0.8 −

3

V

−

3.5 5

Ω

−

−

5.3 Ω

100 200 −

mS

−

25 40 pF

−

22 30 pF

−

6

10 pF

ID = 200 mA

VDD = 50 V

VGS = 0 to 10 V

ID = 200 mA

VDD = 50 V

VGS = 0 to 10 V

−

4

10 ns

−

4

10 ns

April 1995

4

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